Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same

dc.date.accessioned2008-10-27T15:38:26Z
dc.date.available2008-10-27T15:38:26Z
dc.date.issued1994
dc.format.extent1021892 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationSchetzina, J. F. (1994). Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same. U.S. Patent No. 5351255. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1926
dc.language.isoen
dc.titleInverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
dc.typePatent

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