Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides
No Thumbnail Available
Date
1999
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Wu, Y. D., Xiang, Q., Bang, D., Lucovsky, G., Lin, M. R. (1999). Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides. IEEE electron device letters, 20(6), 262-264.
