Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides

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dc.date.accessioned2008-03-04T02:04:52Z
dc.date.available2008-03-04T02:04:52Z
dc.date.issued1999
dc.format.extent60374 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationWu, Y. D., Xiang, Q., Bang, D., Lucovsky, G., Lin, M. R. (1999). Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides. IEEE electron device letters, 20(6), 262-264.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/461
dc.language.isoen
dc.titleTime dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides
dc.typeArticle

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