Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing

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dc.date.accessioned2008-07-28T19:50:59Z
dc.date.available2008-07-28T19:50:59Z
dc.date.issued1995
dc.format.extent60276 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationOzturk, M., & Sanganeria, M. (1995). Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing. U.S. Patent No. 5,439,850. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1216
dc.language.isoen
dc.titleMethod for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing
dc.typePatent

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