Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC

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dc.date.accessioned2008-04-17T15:19:03Z
dc.date.available2008-04-17T15:19:03Z
dc.date.issued2003
dc.format.extent291487 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationSchwarz, U. T., Schuck, P. J., Mason, M. D., Grober, R. D., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2003). Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC. Physical review. B, Condensed matter and materials physics, 67(4), 045321-1.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/604
dc.language.isoen
dc.titleMicroscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC
dc.typeArticle

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