Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates

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dc.date.accessioned2008-10-13T21:29:55Z
dc.date.available2008-10-13T21:29:55Z
dc.date.issued2003
dc.format.extent130541 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationNiimi, H., Chambers, J. J., Khamankar, R., & Grider, D. T. (2003). Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates. U.S. Patent No. 6,503,846. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1320
dc.language.isoen
dc.titleTemperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates
dc.typePatent

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