Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
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2002
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Linthicum, K. J., Gehrke, T., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 6,380,108. Washington, DC: U.S. Patent and Trademark Office.
