Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby

Simple item page
dc.date.accessioned2008-07-23T13:34:29Z
dc.date.available2008-07-23T13:34:29Z
dc.date.issued2002
dc.format.extent85497 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationLinthicum, K. J., Gehrke, T., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 6,380,108. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/901
dc.language.isoen
dc.titlePendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
dc.typePatent

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
US_6380108_B1_I.pdf
Size:
83.49 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.76 KB
Format:
Plain Text
Description:
Download

Collections

Publications