Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing

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dc.date.accessioned2008-02-23T16:40:16Z
dc.date.available2008-02-23T16:40:16Z
dc.date.issued1999
dc.format.extent387885 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationNiimi, H., & Lucovsky, G. (1999). Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 17(6), 3185-3196.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/270
dc.language.isoen
dc.titleMonolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing
dc.typeArticle

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