Solvent Free Post Metal Etch Veil Removal Process Development

dc.contributor.advisorJ.J. Cuomo, Committee Chairen_US
dc.contributor.advisorC. Osburn, Committee Memberen_US
dc.contributor.advisorJ. Narayan, Committee Memberen_US
dc.contributor.authorKoretchko, Kimen_US
dc.date.accessioned2010-04-02T18:08:36Z
dc.date.available2010-04-02T18:08:36Z
dc.date.issued2002-11-13en_US
dc.degree.disciplineMaterials Science and Engineeringen_US
dc.degree.levelthesisen_US
dc.degree.nameMSen_US
dc.description.abstractAs the feature size of advanced integrated circuits decrease, it has become necessary for the semiconductor industry to start investigating advanced methods of polymer residual removal. When metal lines shrink to 0.25um and beyond, the switching speed of the device becomes the limiting factor. In order to shrink the dimensions of the metal lines, advanced photo resist technologies such as the use of deep-UV photo resist are used which creates different post metal etch residuals. Residual polymers which are formed during metal etch processing prove to be more difficult to remove with these advanced photo resists. These residuals, commonly known as veils, become increasingly difficult to remove with the conventional wet chemical solvent systems. A new technology has emerged that moves away from wet chemical processing. The objective of this engineering project was to qualify this new technology. The qualification included tool purchase inputs and development of the new process. The Ulvac Enviro was the tool of choice for this process development. The Enviro provides a unique system which combines the chemistry of a very low-bias reactive ion etch and remote microwave plasma and fluorine gases resulting in enhancing the solubility of residues in solvents, acids or de-ionized water. The Enviro not only provides a solution to the removal of the residual polymers it also has a lower cost of ownership and fewer concerns with chemical waste disposal. A two step microwave/RF process was developed using an Enviro. The process consisted of the following gas flows; NF3, N2/H2(5%) and O2. These gases along with the microwave and RF parameters were the significant factors for this deveil process. A balance between fluorination, oxidation and physical ion bombardment was developed using the Enviro system. Corrosion, veil removal and metal line profiles were among the main factors that were measured and compared against a standard wet chemical cleaning process. The experimental work done with this new Enviro process proved to either match or exceed the existing chemical deveil process. The Enviro process actually showed an improved performance over the standard based on corrosion results. The Enviro also provided more than a 50% reduction in wafer processing cost, by completely eliminating the need for solvent processing. As a result it was determined that the Ulvac Enviro can provide an excellent alternative to the conventional chemical deveil process.en_US
dc.identifier.otheretd-11062002-165203en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/1899
dc.rightsI hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to NC State University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report.en_US
dc.subjectsidewall polymersen_US
dc.subjectetch residuesen_US
dc.subjectveilsen_US
dc.titleSolvent Free Post Metal Etch Veil Removal Process Developmenten_US

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