Performance and Reliability Modeling of AlGaN/GaN Hetero-junction Field Effect Transistors.

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dc.contributor.advisorRobert Trew, Chairen_US
dc.contributor.advisorGriff Bilbro, Co-Chairen_US
dc.contributor.advisorBrian Floyd, Memberen_US
dc.contributor.advisorZhilin Li, Memberen_US
dc.contributor.authorSchimizzi, Ryanen_US
dc.date.accepted2012-07-24en_US
dc.date.accessioned2012-07-30T05:30:44Z
dc.date.available2012-07-30T05:30:44Z
dc.date.defense2012-07-02en_US
dc.date.issued2012-07-02en_US
dc.date.released2012-07-30en_US
dc.date.reviewed2012-07-06en_US
dc.date.submitted2012-07-03en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg1898en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/7975
dc.rightsen_US
dc.titlePerformance and Reliability Modeling of AlGaN/GaN Hetero-junction Field Effect Transistors.en_US

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