Method for forming a field effect transistor having a high-k gate dielectric and related structure

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dc.date.accessioned2008-10-14T17:28:30Z
dc.date.available2008-10-14T17:28:30Z
dc.date.issued2004
dc.format.extent137708 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationJeon, J. S., & Zhong, H. (2004). Method for forming a field effect transistor having a high-k gate dielectric and related structure. U.S. Patent No. 6,797,572. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1446
dc.language.isoen
dc.titleMethod for forming a field effect transistor having a high-k gate dielectric and related structure
dc.typePatent

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