Lateral silicon carbide semiconductor device having a drift region with a varying doping level

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dc.date.accessioned2008-10-16T16:17:00Z
dc.date.available2008-10-16T16:17:00Z
dc.date.issued2000
dc.format.extent142046 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationAlok, D., Mukherjee, S., & Arnold, E. (2000). Lateral silicon carbide semiconductor device having a drift region with a varying doping level. U.S. Patent No. 6,011,278. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1648
dc.language.isoen
dc.titleLateral silicon carbide semiconductor device having a drift region with a varying doping level
dc.typePatent

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