Semiconductor-to-metal Transition Control in Novel VO2/Silicon and VO2/Sapphire Epitaxial Thin Film Heterostructures for Device Applications.

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dc.contributor.advisorJagdish Narayan, Chairen_US
dc.contributor.advisorJohn Prater, Memberen_US
dc.contributor.advisorJames Rigsbee, Memberen_US
dc.contributor.advisorJohn Muth, Memberen_US
dc.contributor.authorGupta, Aloken_US
dc.date.accepted2011-09-12en_US
dc.date.accessioned2011-12-23T06:31:00Z
dc.date.available2011-12-23T06:31:00Z
dc.date.defense2011-09-02en_US
dc.date.issued2011-09-02en_US
dc.date.released2011-12-23en_US
dc.date.reviewed2011-09-06en_US
dc.date.submitted2011-09-02en_US
dc.degree.disciplineMaterials Science and Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg1135en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/7441
dc.titleSemiconductor-to-metal Transition Control in Novel VO2/Silicon and VO2/Sapphire Epitaxial Thin Film Heterostructures for Device Applications.en_US

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