Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein

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dc.date.accessioned2008-07-21T21:28:53Z
dc.date.available2008-07-21T21:28:53Z
dc.date.issued2001
dc.format.extent81699 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBaliga, B. J. (2001). Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein. U.S. Patent No. 6,313,482. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/866
dc.language.isoen
dc.titleSilicon carbide power devices having trench-based silicon carbide charge coupling regions therein
dc.typePatent

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