Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures
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2004
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Bae, C., Krug, C., Lucovsky, G., Chakraborty, A., & Mishra, U. (2004). Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures. Applied physics letters, 84(26), 5413-5415.
