Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures

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dc.date.accessioned2008-02-23T16:43:26Z
dc.date.available2008-02-23T16:43:26Z
dc.date.issued2004
dc.format.extent53332 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBae, C., Krug, C., Lucovsky, G., Chakraborty, A., & Mishra, U. (2004). Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures. Applied physics letters, 84(26), 5413-5415.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/272
dc.language.isoen
dc.titleWork-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures
dc.typeArticle

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