Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy

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dc.date.accessioned2008-04-16T17:48:29Z
dc.date.available2008-04-16T17:48:29Z
dc.date.issued2002
dc.format.extent102494 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationEinfeldt, S., Roskowski, A. M., Preble, E. A., & Davis, R. F. (2002). Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy. Applied physics letters, 80(6), 953-955.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/579
dc.language.isoen
dc.titleStrain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy
dc.typeArticle

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