The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

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dc.date.accessioned2008-03-04T02:02:09Z
dc.date.available2008-03-04T02:02:09Z
dc.date.issued2000
dc.format.extent181561 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationWu, Y., Lucovsky, G., Lee, Y. M. (2000). The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing. IEEE transactions on electron devices, 47(7), 1361-1369.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/460
dc.language.isoen
dc.titleThe performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing
dc.typeArticle

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