Investigation of ALD Dielectrics for Improved Threshold Voltage Stability and Current Collapse Suppression in AlGaN/GaN MOS-HFETs.

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dc.contributor.advisorVeena Misra, Chairen_US
dc.contributor.advisorGriff Bilbro, Memberen_US
dc.contributor.advisorJohn Muth, Memberen_US
dc.contributor.advisorZlatko Sitar, Memberen_US
dc.contributor.authorRamanan, Narayananen_US
dc.date.accepted2014-09-29en_US
dc.date.accessioned2014-12-30T10:30:07Z
dc.date.available2014-12-30T10:30:07Z
dc.date.defense2014-09-10en_US
dc.date.embargo2014-12-30en_US
dc.date.issued2014-09-10en_US
dc.date.released2014-12-30en_US
dc.date.reviewed2014-09-15en_US
dc.date.submitted2014-09-11en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg3815en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/10035
dc.rightsen_US
dc.titleInvestigation of ALD Dielectrics for Improved Threshold Voltage Stability and Current Collapse Suppression in AlGaN/GaN MOS-HFETs.en_US

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