Achieving High-Performance Infrared Range (IR) Photodiode via Bilayer Lead Sulfide Quantum Dots (QDs) Structure.

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dc.contributor.advisorFranky So, Chair
dc.contributor.advisorKenan Gundogdu, Member
dc.contributor.advisorLinyou Cao, Member
dc.contributor.authorYin, Shichen
dc.date.accepted2018-04-04
dc.date.accessioned2018-04-05T12:33:25Z
dc.date.available2018-04-05T12:33:25Z
dc.date.defense2018-03-29
dc.date.issued2018-03-29
dc.date.released2018-04-05
dc.date.reviewed2018-03-30
dc.date.submitted2018-03-30
dc.degree.disciplineMaterial Science & Engineering
dc.degree.levelthesis
dc.degree.nameMaster of Science
dc.identifier.otherdeg8709
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.20/35043
dc.rights
dc.titleAchieving High-Performance Infrared Range (IR) Photodiode via Bilayer Lead Sulfide Quantum Dots (QDs) Structure.

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