MOS gated thyristor having on-state current saturation capability

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dc.date.accessioned2008-10-24T17:11:10Z
dc.date.available2008-10-24T17:11:10Z
dc.date.issued1994
dc.format.extent257264 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationShekar, M. S., & Baliga, B. J. (1994). MOS gated thyristor having on-state current saturation capability. U.S. Patent No. 5319222. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1867
dc.language.isoen
dc.titleMOS gated thyristor having on-state current saturation capability
dc.typePatent

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