Characterization of Wide Band Gap Power Semiconductor Devices.

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dc.contributor.advisorSubhashish Bhattacharya, Chairen_US
dc.contributor.advisorGriff Bilbro, Memberen_US
dc.contributor.advisorB. Baliga, Memberen_US
dc.contributor.authorMahajan, Anirudha Atulen_US
dc.date.accepted2016-03-04en_US
dc.date.accessioned2016-03-06T13:31:40Z
dc.date.available2016-03-06T13:31:40Z
dc.date.defense2016-01-04en_US
dc.date.issued2016-01-04en_US
dc.date.released2016-03-06en_US
dc.date.reviewed2016-01-26en_US
dc.date.submitted2016-01-04en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.levelthesisen_US
dc.degree.nameMaster of Scienceen_US
dc.identifier.otherdeg4907en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/10899
dc.rightsen_US
dc.titleCharacterization of Wide Band Gap Power Semiconductor Devices.en_US

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