Method of forming trenches in monocrystalline silicon carbide

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US_5436174_A_I.pdf (96.51 KB)

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1995

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Baliga, B. J., & Alok, D. (1995). Method of forming trenches in monocrystalline silicon carbide. U.S. Patent No. 5,436,174. Washington, DC: U.S. Patent and Trademark Office.

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http://www.lib.ncsu.edu/resolver/1840.2/1200

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