Method of forming trenches in monocrystalline silicon carbide

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dc.date.accessioned2008-07-28T16:58:48Z
dc.date.available2008-07-28T16:58:48Z
dc.date.issued1995
dc.format.extent98825 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBaliga, B. J., & Alok, D. (1995). Method of forming trenches in monocrystalline silicon carbide. U.S. Patent No. 5,436,174. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1200
dc.language.isoen
dc.titleMethod of forming trenches in monocrystalline silicon carbide
dc.typePatent

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