Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

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dc.date.accessioned2008-04-17T15:05:34Z
dc.date.available2008-04-17T15:05:34Z
dc.date.issued1997
dc.format.extent338627 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationZheleva, T. S., Nam, O.-H., Bremser, M. D., & Davis, R. F. (1997). Dislocation density reduction via lateral epitaxy in selectively grown GaN structures. Applied physics letters, 71(17), 2472-2474.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/596
dc.language.isoen
dc.titleDislocation density reduction via lateral epitaxy in selectively grown GaN structures
dc.typeArticle

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