Ge-MoS2 PN Diodes for TFET Applications.

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dc.contributor.advisorSpyridon Pavlidis, Chair
dc.contributor.advisorDonna Yu, Member
dc.contributor.advisorQuentin Smets, External
dc.contributor.advisorMehmet Ozturk, Member
dc.contributor.authorSingh, Shaleen Prakash
dc.date.accepted2020-07-10
dc.date.accessioned2020-07-14T12:30:52Z
dc.date.available2020-07-14T12:30:52Z
dc.date.defense2020-06-26
dc.date.issued2020-06-26
dc.date.released2020-07-14
dc.date.reviewed2020-07-01
dc.date.submitted2020-06-29
dc.degree.disciplineElectrical Engineering
dc.degree.levelthesis
dc.degree.nameMaster of Science
dc.identifier.otherdeg22234
dc.identifier.urihttps://www.lib.ncsu.edu/resolver/1840.20/38123
dc.titleGe-MoS2 PN Diodes for TFET Applications.

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