Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

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dc.date.accessioned2008-07-24T14:51:20Z
dc.date.available2008-07-24T14:51:20Z
dc.date.issued2006
dc.format.extent75391 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationLinthicum, K. J., Gehrke, T., & Davis, R. F. (2006). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 7,095,062. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1010
dc.language.isoen
dc.titleMethods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby
dc.typePatent

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