Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices

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dc.date.accessioned2008-07-24T16:56:17Z
dc.date.available2008-07-24T16:56:17Z
dc.date.issued2007
dc.format.extent66833 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationOzturk, M., Misra, V., & Chopra, S. (2007). Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices. U.S. Patent No. 7,211,458. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1059
dc.language.isoen
dc.titleMethods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices
dc.typePatent

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