Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces

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dc.date.accessioned2008-02-23T16:53:07Z
dc.date.available2008-02-23T16:53:07Z
dc.date.issued1999
dc.format.extent587369 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationWolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., Nemanich, R. J., Maher, D. M. (1999). Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 17(4), 2170-2177.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/277
dc.language.isoen
dc.titleThermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces
dc.typeArticle

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