Design, Development and Control of >13kV Silicon-Carbide MOSFET based Solid State Transformer(SST).

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dc.contributor.advisorAlex Huang, Chairen_US
dc.contributor.advisorSubhashish Bhattacharya, Memberen_US
dc.contributor.advisorMesut Baran, Memberen_US
dc.contributor.advisorSrdjan Lukic, Memberen_US
dc.contributor.advisorGeorgios Rouskas, Graduate School Representativeen_US
dc.contributor.authorWang, Gangyaoen_US
dc.date.accepted2013-12-03en_US
dc.date.accessioned2013-12-06T10:30:17Z
dc.date.available2013-12-06T10:30:17Z
dc.date.defense2013-08-20en_US
dc.date.issued2013-08-20en_US
dc.date.released2013-12-06en_US
dc.date.reviewed2013-08-26en_US
dc.date.submitted2013-08-20en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg2941en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/9163
dc.rightsen_US
dc.titleDesign, Development and Control of >13kV Silicon-Carbide MOSFET based Solid State Transformer(SST).en_US

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