Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates

Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates

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Date

2004

Citation

Basceri, C., Vasilyeva, I., Derraa, A., Campell, P. H., & Sandhu, G. S. (2004). Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates. U.S. Patent No. 6,734,051. Washington, DC: U.S. Patent and Trademark Office.