Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates
| dc.date.accessioned | 2008-10-14T15:41:50Z | |
| dc.date.available | 2008-10-14T15:41:50Z | |
| dc.date.issued | 2004 | |
| dc.format.extent | 126501 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Basceri, C., Vasilyeva, I., Derraa, A., Campell, P. H., & Sandhu, G. S. (2004). Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates. U.S. Patent No. 6,734,051. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1384 | |
| dc.language.iso | en | |
| dc.title | Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates | |
| dc.type | Patent |
