Understanding the behavior of 1200 V SiC MOSFET under Short Circuit and Avalanche operation and Behavior of 1200 V SiC JBS Diode under Avalanche operation

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dc.contributor.advisorSubhashish Bhattacharya, Chair
dc.contributor.advisorB. Baliga, Member
dc.contributor.advisorDouglas Hopkins, Member
dc.contributor.authorGupta, Shivam
dc.date.accepted2016-10-05
dc.date.accessioned2016-10-08T12:31:32Z
dc.date.available2016-10-08T12:31:32Z
dc.date.defense2016-08-10
dc.date.issued2016-08-10
dc.date.released2016-10-08
dc.date.reviewed2016-08-18
dc.date.submitted2016-08-10
dc.degree.disciplineElectrical Engineering
dc.degree.levelthesis
dc.degree.nameMaster of Science
dc.identifier.otherdeg5472
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.20/22927
dc.rights
dc.titleUnderstanding the behavior of 1200 V SiC MOSFET under Short Circuit and Avalanche operation and Behavior of 1200 V SiC JBS Diode under Avalanche operation

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