Passivated silicon carbide devices with low leakage current and method of fabricating

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US_6373076_B1_I.pdf (126.8 KB)

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2002

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Alok, D., & Arnold, E. (2002). Passivated silicon carbide devices with low leakage current and method of fabricating. U.S. Patent No. 6,373,076. Washington, DC: U.S. Patent and Trademark Office.

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http://www.lib.ncsu.edu/resolver/1840.2/1674

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