Passivated silicon carbide devices with low leakage current and method of fabricating
| dc.date.accessioned | 2008-10-16T16:56:01Z | |
| dc.date.available | 2008-10-16T16:56:01Z | |
| dc.date.issued | 2002 | |
| dc.format.extent | 129839 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Alok, D., & Arnold, E. (2002). Passivated silicon carbide devices with low leakage current and method of fabricating. U.S. Patent No. 6,373,076. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1674 | |
| dc.language.iso | en | |
| dc.title | Passivated silicon carbide devices with low leakage current and method of fabricating | |
| dc.type | Patent |
