H loss mechanism during anneal of silicon nitride: Chemical dissociation

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dc.date.accessioned2008-03-03T20:51:45Z
dc.date.available2008-03-03T20:51:45Z
dc.date.issued2000
dc.format.extent129768 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBoehme, C., & Lucovsky, G. (2000). H loss mechanism during anneal of silicon nitride: Chemical dissociation. Journal of applied physics, 88(10), 6055-6059.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/419
dc.language.isoen
dc.titleH loss mechanism during anneal of silicon nitride: Chemical dissociation
dc.typeArticle

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