Doping properties of C, Si, and GE impurities in GaN and AlN

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dc.date.accessioned2008-02-22T22:18:33Z
dc.date.available2008-02-22T22:18:33Z
dc.date.issued1997
dc.format.extent524913 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBoguslawski, P., & Bernholc, J. (1997). Doping properties of C, Si, and GE impurities in GaN and AlN. Physical review. B, Condensed matter and materials physics, 56(15), 9496-9505.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/218
dc.language.isoen
dc.titleDoping properties of C, Si, and GE impurities in GaN and AlN
dc.typeArticle

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