Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby
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2003
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Gehrke, T., Linthicum, K. J., & Davis, R. F. (2003). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 6,545,300. Washington, DC: U.S. Patent and Trademark Office.
