Electronic states at the interface of Ti-Si oxide on Si(100)

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dc.date.accessioned2008-02-22T22:36:44Z
dc.date.available2008-02-22T22:36:44Z
dc.date.issued2002
dc.format.extent102480 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationFulton, C. C., Lucovsky, G., & Nemanich, R. J. (2002). Electronic states at the interface of Ti-Si oxide on Si(100). Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 20(4), 1726-1731.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/231
dc.language.isoen
dc.titleElectronic states at the interface of Ti-Si oxide on Si(100)
dc.typeArticle

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