Second gallium nitride layers that extend into trenches in first gallium nitride layers
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2005
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Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2005). Second gallium nitride layers that extend into trenches in first gallium nitride layers. U.S. Patent No. 6,897,483. Washington, DC: U.S. Patent and Trademark Office.
