Second gallium nitride layers that extend into trenches in first gallium nitride layers

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dc.date.accessioned2008-07-24T21:45:41Z
dc.date.available2008-07-24T21:45:41Z
dc.date.issued2005
dc.format.extent76692 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationZheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2005). Second gallium nitride layers that extend into trenches in first gallium nitride layers. U.S. Patent No. 6,897,483. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1123
dc.language.isoen
dc.titleSecond gallium nitride layers that extend into trenches in first gallium nitride layers
dc.typePatent

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