Trends in residual stress for GaN/AlN/6H-SiC heterostructures

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dc.date.accessioned2008-04-17T14:49:29Z
dc.date.available2008-04-17T14:49:29Z
dc.date.issued1998
dc.format.extent57990 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationEdwards, N. V., Bremser, M. D., Davis, R. F., Batchelor, A. D., Yoo, S. D., Karan, C. F., & Aspnes, D. E. (1998). Trends in residual stress for GaN/AlN/6H-SiC heterostructures. Applied physics letters, 73(19), 2808-2810.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/593
dc.language.isoen
dc.titleTrends in residual stress for GaN/AlN/6H-SiC heterostructures
dc.typeArticle

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