Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries

dc.date.accessioned2008-10-17T18:16:39Z
dc.date.available2008-10-17T18:16:39Z
dc.date.issued2006
dc.format.extent110190 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationCarlisle, J. A., Auciello, O., & Birrell, J. (2006). Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries. U.S. Patent No. 7,128,889. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1732
dc.language.isoen
dc.titleMethod to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries
dc.typePatent

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