Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries
dc.date.accessioned | 2008-10-17T18:16:39Z | |
dc.date.available | 2008-10-17T18:16:39Z | |
dc.date.issued | 2006 | |
dc.format.extent | 110190 bytes | |
dc.format.mimetype | application/pdf | |
dc.identifier.citation | Carlisle, J. A., Auciello, O., & Birrell, J. (2006). Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries. U.S. Patent No. 7,128,889. Washington, DC: U.S. Patent and Trademark Office. | |
dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1732 | |
dc.language.iso | en | |
dc.title | Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries | |
dc.type | Patent |