Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
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1998
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Schetzina, J. F. (1998). Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same. U.S. Patent No. 5,818,072. Washington, DC: U.S. Patent and Trademark Office.
