Ultrathin oxide-nitride gate dielectric MOSFET's19

Simple item page
dc.date.accessioned2008-03-04T01:51:53Z
dc.date.available2008-03-04T01:51:53Z
dc.date.issued1998
dc.format.extent58186 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationParker, C. G., Lucovsky, G., & Hauser, J. R. (1998). Ultrathin oxide-nitride gate dielectric MOSFET's. IEEE electron device letters, 19(4), 106-108.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/455
dc.language.isoen
dc.titleUltrathin oxide-nitride gate dielectric MOSFET's19
dc.typeArticle

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
lucovsky_1998_ieee_electron_device_lett_106.pdf
Size:
56.82 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.77 KB
Format:
Plain Text
Description:
Download

Collections

Publications