Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing
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1997
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Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. (1997). Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 15(4), 1074-1079.
