Stacked quantum well aluminum indium gallium nitride light emitting diodes

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dc.date.accessioned2008-07-17T20:11:14Z
dc.date.available2008-07-17T20:11:14Z
dc.date.issued1997
dc.format.extent89714 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationMcIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1997). Stacked quantum well aluminum indium gallium nitride light emitting diodes. U.S. Patent No. 5,684,309. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/735
dc.language.isoen
dc.titleStacked quantum well aluminum indium gallium nitride light emitting diodes
dc.typePatent

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