Metal-insulator-semiconductor capacitor formed on silicon carbide

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dc.date.accessioned2008-10-24T19:30:17Z
dc.date.available2008-10-24T19:30:17Z
dc.date.issued1989
dc.format.extent135270 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationPalmour, J. W. (1989). Metal-insulator-semiconductor capacitor formed on silicon carbide. U.S. Patent No. 4875083. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1886
dc.language.isoen
dc.titleMetal-insulator-semiconductor capacitor formed on silicon carbide
dc.typePatent

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