Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor
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2002
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Fan, Y. Y., Nieh, R. E., Lee, J. C., Lucovsky, G., Brown, G. A., Register, L. F., & Banerjee, S. K. (2002). Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor. IEEE transactions on electron devices, 49(11), 1969-1978.
